2SK2828 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2828
Hitachi -> Renesas Electronics
2SK2828 Datasheet PDF : 10 Pages
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2SK2828
Body–Drain Diode Reverse
Recovery Time
5
2
1
0.5
0.2
0.1
di / dt = 100 A / µs
0.05
VGS = 0, Ta = 25 °C
0.1 0.2 0.5 1 2 5 10 20 50
Reverse Drain Current I DR (A)
5000
2000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
500
200
Coss
100
50
VGS = 0
f = 1 MHz
20
10
Crss
5
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
1000
20
ID = 12 A
VGS
800
16
600
VDS
400
V DD = 100 V
250 V
12
400 V
8
200
0
V DD = 400 V
4
250 V
100 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Switching Characteristics
500
200
t d(off)
100
50
20
10
5
0.1
tf
t d(on)
tr
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.3 1 3 10 30 100
Drain Current I D (A)
6
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