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M2GZ47 Просмотр технического описания (PDF) - Toshiba

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M2GZ47 Datasheet PDF : 5 Pages
1 2 3 4 5
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
II
Gate Trigger Voltage
III
IV
I
SM2GZ47
II
SM2JZ47
III
Gate Trigger
IV
Current
I
SM2GZ47A
II
SM2JZ47A
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
T2 (+) , Gate (+)
20
µA
1.5
VGT
VD = 12V
RL = 20
T2 (+) , Gate ()
1
V
T2 () , Gate ()
1
T2 () , Gate (+)
T2 (+) , Gate (+)
8
T2 (+) , Gate ()
8
T2 () , Gate ()
8
IGT
VD = 12V
RL = 20
T2 () , Gate (+)
mA
T2 (+) , Gate (+)
5
T2 (+) , Gate ()
5
T2 () , Gate ()
5
T2 () , Gate (+)
VTM
VGD
IH
Rth (ja)
ITM = 3A
VD = Rated, Tc = 125°C
RL = 100
Junction to Ambient, AC
1.7
V
0.2
V
10
mA
55 °C / W
2
2001-07-10

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