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PJ2N5551CT

NPN Epitaxial Silicon Transistors

Promax Johnton 

PJ2N5551

NPN Epitaxial Silicon Transistors

AMPLIFIER TRANSISTO R

• Collector-Base Voltage: VCEO=160V

• Collector Dissipation Pc=0.625W(Tc=25℃)

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

Characteristic

Symbol Rating Unit

Collector-base Voltage

Collector-Emitter Voltage

Emitter-base Voltage

Collector Current (DC)

* Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

180

V

VCEO

160

V

VEBO

5

V

IC

0.6

A

PC

0.625 W

TJ

150

℃

Tstg -55~150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

TO-92

P in : 1. Emitter

2.Base

3.Collector

ORDERING INFORMATION

Device

PJ2N5551CT

Operating Temperature

-20℃～+85℃

Package

T O-92

Characteristic

Symbol

Test Condition

Min Typ Max

Collector-Base Breakdown Voltage

BVCBO Ic=100μA,IE=0

180

Collector- Emitter Breakdown

BVCEO Ic=1mA,IB=0

160

Voltage

BVEBO IE=10μA,IC=0

6

Emitter-Base Breakdown Voltage

ICBO

VCB=120V,IE=0

50

Collector Cutoff Current

IEBO

VEB=4V,Ic=0

50

Emitter Cutoff Current

HEF1

VCE=5V,IC=1 mA

80

DC Current Gain

HEF2

VCE=5V,IC=10mA

80

HEF3

VCE=5V,IC=50mA

30

VCE(SAT) Ic=10 mA,IB=1 mA

0.15

Collector-Emitter Saturation Voltage

Ic=50 mA,IB=5 mA

0.2

VBE(SAT) Ic=10 mA,IB=1 mA

1

Base-Emitter Saturation Voltage

Ic=50 mA,IB=5 mA

1

Cob VCB=20V,IE=0, f=1MHz

6

Output Capacitance

fT

VCE=10V,Ic=10Ma,f=100 MHz 100

300

Current Gain-Bandwidth product

NF

VCE=5V,IC=250μA

8

Noise Figure

Rs=1KΩ,f=10Hz to 15.7KHz

• Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

Unit

V

V

V

nA

nA

V

V

V

V

PF

MHz

dB

1-3

2002/01.rev.A

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