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W9812G6GH-6C Просмотр технического описания (PDF) - Winbond

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W9812G6GH-6C
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W9812G6GH-6C Datasheet PDF : 42 Pages
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W9812G6GH
1. GENERAL DESCRIPTION
W9812G6GH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
2M words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology,
W9812G6GH delivers a data bandwidth of up to 166M words per second (-6). For different application,
W9812G6GH is sorted into two speed grades: -6/6C/6I, -75. The –6/6C/6I is compliant to the
166Mhz/CL3 specification, the -75 is compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9812G6GH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V ± 0.3V Power Supply
Up to 166 MHz Clock Frequency
2,097,152 Words × 4 banks × 16 bits organization
Self Refresh Mode
CAS Latency: 2and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM
Auto-precharge and Controlled Precharge
4K Refresh cycles / 64 mS
Interface: LVTTL
Packaged in TSOP II 54 pin, 400 mil - 0.80
W9812G6GH is using Lead free materials
RoHS compliant
3. AVAILABLE PART NUMBER
PART NUMBER
W9812G6GH-6
W9812G6GH-6C
W9812G6GH-6I
W9812G6GH-75
SPEED
166MHz/CL3
166MHz/CL3
166MHz/CL3
133MHz/CL3
MAXIMUM SELF
REFRESH CURRENT
2 mA
2 mA
2 mA
2 mA
OPERATING
TEMPERATURE
0°C ~ 70°C
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
Publication Release Date:Aug. 13, 2007
-3
-Revision A06

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