UFB200FA60P Просмотр технического описания (PDF) - Vishay Semiconductors
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UFB200FA60P Datasheet PDF : 8 Pages
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UFB200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode breakdown voltage VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
IR = 100 μA
IF = 100 A
IF = 200 A
IF = 100 A
IF = 200 A
TJ = 125 °C
VR = VR rated
TJ = 175 °C, VR = VR rated
VR = 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.46
1.7
1.23
1.5
0.1
0.3
80
MAX.
-
1.78
2.05
1.52
1.78
100
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
IF = 50 A
-
dIF/dt = 200 A/μs
VR = 200 V
-
-
-
TYP.
83
182
7
18
290
1595
MAX.
108
235
10
22
540
2585
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single leg conducting
Junction to case,
both leg conducting
RthJC
Case to heatsink
RthCS
Flat, greased surface
Weight
Mounting torque
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX. UNITS
0.5
0.25 °C/W
-
-
g
-
N·m
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 94566
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
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