GP2401ESM18 Просмотр технического описания (PDF) - Dynex Semiconductor
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GP2401ESM18 Datasheet PDF : 9 Pages
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GP2401ESM18
4800
4200
3600
3000
2400
Tj = 25˚C
Tj = 125˚C
1800
1200
600
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
10000
6000
5000
4000
3000
2000
Tcase = 125˚C
1000 Vge = ±15V
Rg(off) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
2000
100
1000
IC max (DC)
100
10
tp = 50µs
tp = 100µs
10
tp = 1ms
1
Diode
Transistor
1
1
10
100
1000
Collector emitter voltage, Vce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, tp - (ms)
10000
Fig. 10 Transient thermal impedance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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