GP800DDM12 Просмотр технического описания (PDF) - Dynex Semiconductor
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GP800DDM12 Datasheet PDF : 11 Pages
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GP800DDM12
1600
1400
1200
1000
Tj = 25˚C
Tj = 125˚C
800
600
400
200
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Fig.11 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge = ±15V
200 Rg = 3.3Ω*
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, Vce - (V)
1200
Fig.12 Reverse bias safe operating area
10000
IC max. (single pulse)
1000
100
10
100
10
tp = 50µs
tp = 100µs
tp = 1ms
1
Diode
Transistor
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.13 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, tp - (ms)
Fig.14 Transient thermal impedance
10000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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