GP801DDS18 Просмотр технического описания (PDF) - Dynex Semiconductor
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GP801DDS18 Datasheet PDF : 10 Pages
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GP801DDS18
1800
1600
1400
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
1200
1000
800
600
400
Conditions:
200 Tj = 125˚C, Tcase = 75˚C
Rg = 2.2Ω, VCC = 800V
0
1
10
50
fmax - (kHz)
Fig. 11 3 Phase inverter operating frequency
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 12 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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