STTH1002CB Просмотр технического описания (PDF) - STMicroelectronics
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STTH1002CB Datasheet PDF : 8 Pages
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STTH1002C
Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
60
50
40
30
P = 10W
IM
T
20
P = 5W
δ=tp/T
tp
10
P = 2W
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
IFM(A)
100
90
80
70
60
50
Tj=150°C
40
30
Tj=25°C
20
10
VFM(V)
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100
90
80
70
60
50
Tj=150°C
40
30
Tj=25°C
20
10
VFM(V)
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
I2PAK, D2PAK, DPAK).
Zth(j-c)/Rth(j-c)
1.0
Single pulse
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
Single pulse
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
10
0
VR(V)
50
100
150
200
3/8
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