STTH1002CG Просмотр технического описания (PDF) - STMicroelectronics
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STTH1002CG Datasheet PDF : 8 Pages
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STTH1002C
THERMAL PARAMETERS
Symbol
Rth (j-c)
Rth (j-c)
Junction to case
Coupling
Parameter
TO-220AB / I2PAK / D2PAK
/ DPAK
Per diode
Per device
TO-220FPAB
Per diode
Per device
TO-220AB / I2PAK / D2PAK / DPAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Maximum
4.0
2.5
6.5
5
1.0
3.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR* Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
VF** Forward voltage drop Tj = 25°C
IF = 5 A
Tj = 25°C
IF = 10 A
Tj = 150°C
IF = 5 A
Tj = 150°C
IF = 10 A
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
Min. Typ. Max. Unit
5
µA
3
40
1.1
V
1.25
0.78 0.89
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x IF(AV) + 0.032 IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter
Tests conditions
Min. Typ. Max. Unit
trr
Reverse
Tj = 25°C IF = 1 A VR = 30V
recovery time
dIF/dt = 100 A/µs
20 25 ns
IRM
Reverse
Tj = 125°C IF = 5 A VR = 160V
recovery current
dIF/dt = 200 A/µs
5.9 7.6 A
tfr
Forward
Tj = 25°C IF = 5 A dIF/dt = 100 A/µs
recovery time
VFR = 1.1 x VFmax
110 ns
VFP
Forward
Tj = 25°C IF = 5 A dIF/dt = 100 A/µs
2.4
V
recovery voltage
2/8
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