MS1226 Просмотр технического описания (PDF) - Microsemi Corporation

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MS1226

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

• 30 MHz

• 28 VOLTS

• IMD = -28 dB

• POUT = 30 WATTS

• GP = 18 dB MINIMUM

• COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1226 is a 28V epitaxial silicon NPN planar transistor

designed primarily for SSB communications. This device

utilizes emitter ballasting for improved ruggedness and

reliability.

MS1226

ABSOLUTE MAXIMUM RATINGS

Symbol

VCBO

VCEO

VEBO

IC

PDISS

TJ

TSTG

Parameter

Collector-base Voltage

Collector-emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

Thermal Data

RTH(J-C)

Junction-case Thermal Resistance

MSC0943.PDF 10-28-98

Value

65

36

4.0

4.5

80

+200

-65 to +150

2.2

Unit

V

V

V

A

W

°C

°C

° C/W

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