MBRF2545CT Просмотр технического описания (PDF) - Tiger Electronic

Номер в каталоге

Компоненты Описание

Список матч

MBRF2545CT

TO-220F Plastic-Encapsulate Diodes

Tiger Electronic 

TIGER ELECTRONIC CO.,LTD

TO-220F Plastic-Encapsulate Diodes

MBRF2545CT

SCHOTTKY BARRIER RECTIFIER

FEATURES

z Schottky Barrier Chip

z Guard Ring Die Construction for Transient Protection

z Low Power Loss, High Efficiency

z High Surge Capability

z High Current Capability and Low Forward Voltage Drop

z For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

TO-220F

1.ANODE

2.CATHODE

3.ANODE

1

2

2

3

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Symbol

VRRM

VRWM

VR

VR(RMS)

Value

45

32

Average Rectified Output Current (Note 1)

Tc=130℃

Peak Repetitive Reverse Surge Current (Note 3)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load

(JEDEC Method)

Forward Voltage Drop @ IF=30A, TC=125℃

@ IF=30A, TC= 25℃

Peak Reverse Current

@ TC= 25℃

at Rated DC Blocking Voltage

@ TC=125℃

Typical Junction Capacitance (Note 2)

IO

IRRM

IFSM

VFM

IRM

CT

30

1.0

150

0.73

0.82

0.2

40

750

Typical Thermal Resistance Junction to Case (Note 1)

RθJC

1.5

Operating and Storage Temperature Range

Tj,TSTG

Notes: 1. Thermal resistance junction to case mounted heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3．2.0μs pulse width, f = 1.0KHz.

-55~+125

Unit

V

V

A

A

A

V

mA

pF

℃/W

℃

A,Jun,2011

Share Link: