IRFD320 Просмотр технического описания (PDF) - Intersil
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IRFD320 Datasheet PDF : 6 Pages
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IRFD320
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
ISDM
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
MIN
TYP
MAX UNITS
-
-
0.5
A
-
-
2.0
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
VSD
TJ = 25oC, ISD = 2.0A, VGS = 0V (Figure 12)
-
trr
TJ = 150oC, ISD = 2.0A, dISD/dt = 100A/µs
-
QRR
TJ = 150oC, ISD = 2.0A, dISD/dt = 100A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A.
-
1.6
V
450
-
ns
3.1
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
0.5
1.0
0.8
0.3
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0.1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.1
00.1
0.001
1
TJ
TC
=
=
MAX RATED
25oC
SINGLE PULSE
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
100ms
1s
DC
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
6
VGS = 6.0V
5
VGS = 10V
4
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5.5V
VGS = 5.0V
2
VGS = 4.5V
1
VGS = 4.0V
00
100
200
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-301
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