DIM800DDM17-A000(2002) Просмотр технического описания (PDF) - Dynex Semiconductor
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DIM800DDM17-A000 Datasheet PDF : 10 Pages
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DIM800DDM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Rth(j-c)
Thermal resistance - transistor (per arm)
Rth(j-c)
Thermal resistance - diode (per arm)
Rth(c-h)
Tj
Thermal resistance - case to heatsink
(per module)
Junction temperature
T
Storage temperature range
stg
-
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Typ. Max. Units
-
-
18 ˚C/kW
-
-
40 ˚C/kW
-
-
8 ˚C/kW
-
-
150 ˚C
-
-
125 ˚C
–40
-
125 ˚C
-
-
5
Nm
-
-
2
Nm
-
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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