K9F1208Q0A Просмотр технического описания (PDF) - Samsung

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K9F1208Q0A

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Samsung 

K9F5608U0C-VCB0,VIB0,FCB0,FIB0

K9F5608Q0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-YCB0,YIB0,PCB0,PIB0

K9F5608U0C-DCB0,DIB0,HCB0,HIB0

K9F5616Q0C-DCB0,DIB0,HCB0,HIB0

K9F5616U0C-YCB0,YIB0,PCB0,PIB0

K9F5616U0C-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and

is recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10µs is required before internal

circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides

additional software protection.

Figure 18. AC Waveforms for Power Transition

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

VCC

High

WP

WE

10µs

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

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