DF2S5.6FS Просмотр технического описания (PDF) - Toshiba
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DF2S5.6FS Datasheet PDF : 3 Pages
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Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
Criterion: No damage to device elements
Marking
DF2S5.6FS
Equivalent Circuit (Top View)
.6
IZ - VZ
100
Ta=25°C
10
1
00.1
0.01
0 1 2 3 4 5 6 7 8 9 10
ZENER VOLTAGE VZ (V)
CT - VR
100
f=1MHz
Ta=25°C
10
1
0
1
2
3
4
5
6
REVERSE VOLTAGE VR(V)
2
2007-11-01
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