BAW56DW Просмотр технического описания (PDF) - Willas Electronic Corp.

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BAW56DW

SOT-363 Plastic-Encapsulate Diode

Willas Electronic Corp. 

WILLAS

SO1.0TA-S3U6R3FAPCElaMsOUtiNcT-SECnHOcTaTpKYsBuAlRaRtIeERDREioCTdIFeIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAW56DWTHRU

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data

.087(2.20)

.071(1.80) • Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.011 gram

Package outline

S O T- 3 6 3 SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

.030(0.75) For capacitive load, derate current by 20%

Marking Code

. RATINGS 021(0.55)

.010(0.25)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

12

13

14

15

16 .00183(0.0180)

115 120

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

80

100

150

200 Vo

Maximum RMS Voltage

.056(1.40) VRMS 14

21

28

35

42

56

70

105

140 Vo

Maximum DC Blocking Voltage

.047(1.20) Maximum Average Forward Rectified Current

VDC

IO

20

30

40

50

60

80

1.0

100

150

200 Vo

Am

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

30

Am

Typical Thermal Resistance (Note 2)

RΘJA

40

℃

.004(0.10)MAX. Typical Junction Capacitance (Note 1)

Operating Temperature Range

CJ

TJ

-55 to +125

120

-55 to +150

P

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92 Vo

.016(0.40) Maximum Average Reverse Current at @T A=25℃

IR

0.5

mA

Rated DC Blocking Voltage

@T A=125℃

10

.004(0.10)

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-06

2012-1

Dimensions in inches and (millimeters)

WILLAS ELECTRROevN.IDC CORP.

WILLAS ELECTRONIC CORP.

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