2SK3265 Просмотр технического описания (PDF) - Toshiba

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2SK3265

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Gate−source breakdown voltage

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

V (BR) GSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±25 V, VDS = 0 V

IG = ±10 μA, VDS = 0 V

VDS = 700 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 5 A

VDS = 10 V, ID = 5 A

VDS = 25 V, VGS = 0 V, f = 1 MHz

Rise time

tr

2SK3265

Min Typ. Max Unit

—

—

±10

μA

±30 —

—

V

—

—

100

μA

700 —

—

V

2.0

—

4.0

V

— 0.72 1.0

Ω

4.0 7.0

—

S

— 1700 —

—

40

—

pF

— 200 —

—

40

—

Turn−on time

Switching time

Fall time

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

ton

tf

≈

toff

≤

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 10 A

Qgd

—

72

—

ns

—

42

—

— 145 —

—

53

—

—

25

—

nC

—

28

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 10 A, VGS = 0 V

IDR = 10 A, VGS = 0 V

dIDR / dt = 100 A / μs

Min Typ. Max Unit

—

—

10

A

—

—

30

A

—

—

−1.9

V

— 1400 —

ns

— 17.5 —

μC

Marking

K3265

Note 4: A line under a Lot No. identifies the indication of product

Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Part No. (or abbreviation code)

Lot No.

Note 4

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

2

2009-09-29

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