2SK3117 Просмотр технического описания (PDF) - Toshiba

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2SK3117

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Gate−source breakdown voltage

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

V (BR) GSS

IDSS

VGS = ±25 V, VDS = 0 V

IG = ±10 μA, VDS = 0 V

VDS = 500 V, VGS = 0 V

V (BR) DSS ID = 10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 10 A

VDS = 10 V, ID = 10 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 6 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

VDR = 20 A, VGS = 0 V

IDR = 20 A, VGS = 0 V

dIDR / dt = 100 A / μs

Marking

TOSHIBA

K3117

Part No. (or abbreviation code)

Lot No.

2SK3117

Min Typ. Max Unit

—

—

±10

μA

±30 —

—

V

—

—

100

μA

500 —

—

V

2.0

—

4.0

V

— 0.21 0.27 Ω

10

17

—

S

— 3720 —

— 340 —

pF

— 1165 —

—

30

—

—

70

—

ns

—

50

—

— 290 —

—

80

—

—

48

—

nC

—

32

—

Min Typ. Max Unit

—

—

20

A

—

—

80

A

—

—

−1.7

V

— 540 —

ns

—

5.4

—

μC

2

2006-11-06

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