2SK2925S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2925S Datasheet PDF : 10 Pages
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2SK2925(L),2SK2925(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I D = 10 A
0.4
5A
2A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
1
2
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
I D = 10 A 5 A 2 A
0.2
V GS = 4 V
0.1
0
10 V
10 A 2, 5 A
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
25 °C
2
75 °C
1
V DS = 10 V
0.5
Pulse Test
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
5
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