2SK2601 Просмотр технического описания (PDF) - Toshiba

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2SK2601

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Gate−source breakdown voltage

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

V (BR) GSS

IDSS

I (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±25 V, VDS = 0 V

IG = ±10 μA, VDS = 0 V

VDS = 500 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 5 A,

VDS = 10 V, ID = 5 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

toff

Total gate charge (gate−source

plus gate−drain)

Qg

Gate−source charge

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 10 A

Gate−drain (“miller”) Charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 10 A, VGS = 0 V

IDR = 10 A, VGS = 0 V

dIDR / dt = 100 A / μs

Marking

2SK2601

Min Typ. Max Unit

—

—

±10

μA

±30 —

—

V

—

—

100

μA

500

—

—

V

2.0

—

4.0

V

— 0.75 1.0

Ω

3.5 7.0

—

S

— 1200 —

— 200 —

pF

— 550 —

—

30

—

—

50

—

ns

—

45

—

— 180 —

—

30

—

—

15

—

nC

—

15

—

Min Typ. Max Unit

—

—

10

A

—

—

40

A

—

—

−1.7

V

— 1200 —

ns

—

10

—

μC

TOSHIBA

K2601

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-02

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