2SK1637 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK1637

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source

2SK1637 V(BR)DSS 600

—

breakdown voltage 2SK2422

650

Gate to source breakdown

voltage

V(BR)GSS ±30

—

Gate to source leak current

I GSS

—

—

Zero gate voltage 2SK1637 IDSS

—

—

drain current

2SK2422

Gate to source cutoff voltage VGS(off) 2.0

—

Static Drain to source 2SK1637 RDS(on) —

1.8

on state resistance 2SK2422

—

2.0

Forward transfer admittance |yfs|

2.2

3.5

Input capacitance

Ciss —

600

Output capacitance

Coss —

140

Reverse transfer capacitance Crss —

25

Turn-on delay time

t d(on)

—

8

Rise time

tr

—

30

Turn-off delay time

t d(off)

—

60

Fall time

tf

—

35

Body to drain diode forward

VDF

—

0.9

voltage

Body to drain diode reverse

t rr

recovery time

—

300

Note 1. Pulse test

Max

—

—

±10

250

3.0

2.4

2.6

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

2SK1637, 2SK2422

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 500 V, VGS = 0

VDS = 550 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V *1

ID = 2 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2 A, VGS = 10 V,

RL = 15 Ω

IF = 4 A, VGS = 0

IF = 4 A, VGS = 0,

diF/dt = 100 A/µs

See characteristics curves of 2SK1402, 2SK1402A.

3

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