K2315 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K2315

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2315

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

VDSS

60

Gate to source voltage

VGSS

±20

Drain current

ID

2

Drain peak current

I *1

D(pulse)

4

Body to drain diode reverse drain current

I DR

2

Channel dissipation

Pch*2

1

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)

3. Marking is “TY”

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

60

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

0.5

Static drain to source on state RDS(on)

—

resistance

—

Typ

—

—

—

—

—

0.4

0.35

Forward transfer admittance |yfs|

1.5 1.8

Input capacitance

Ciss

—

173

Output capacitance

Coss —

85

Reverse transfer capacitance Crss

—

23

Turn-on time

Turn-off time

Note 1. Pulse Test

t on

—

21

t off

—

85

Max

—

—

±5

5

1.5

0.6

0.45

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 50 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 0.3 A

VGS = 3 V*1

ID = 1 A

VGS = 4 V*1

ID = 1 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 1 A, RL = 30 Ω

VGS = 10 V

2

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