2SK2202 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2202 Datasheet PDF : 10 Pages
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2SK2202
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs, V GS = 0
Ta = 25 °C, Pulse Test
10
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
200
100
Coss
50
Crss
20
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
VGS
160
16
I D= 7 A
120
VDS
80
12
VDD = 100 V
50 V
25 V 8
40
VDD = 100 V
50 V
4
25 V
0
0
8
16 24 32
40
Gate Charge Qg (nc)
Switching Characteristics
500
200
t d(off)
100
50
VGS = 10 V
20 V DD = 30 V
PW = 2 µs
10 duty < 1 %
5
tf
tr
t d(on)
3
0.1 0.2 0.5 1 2
5 10
Drain Current I D (A)
6
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