J610 Просмотр технического описания (PDF) - Toshiba

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J610

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)

Toshiba 

3

1

Duty = 0.5

0.5

0.3 0.2

0.1

0.1

0.05

0.05 0.02

0.03

0.01

Single pulse

0.01

0.005

0.003

0.001

10 μ

100 μ

1m

rth – tw

10 m

100 m

Pulse width tw (S)

PDM

t

T

Duty = t/T

Rth (ch-c) = 6.25°C/W

1

10

100

2SJ610

Safe operating area

−100

−50

−30

−10

−5 ID max (pulsed) *

−3

1 ms *

DC

−1

−0.5

−0.3

100 μs *

−0.1

* Single nonrepetitive pulse

−0.0 Tc = 25°C

−0.0 Curves must be derated linearly

with increase in temperature.

VDSS max

−0.0

1

3 5 10

30 50 100 300 500 1000

Drain-source voltage VDS (V)

EAS – Tch

200

160

120

80

40

0

25

50

75

100

125

150

Channel temperature (initial) Tch (°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

Test circuit

RG = 25 Ω

VDD = −50 V, L = 75 mH

Waveform

ΕAS

=

1

2

⋅L ⋅I2

⋅

⎜⎜⎝⎛

BVDSS

BVDSS − VDD

⎟⎟⎠⎞

5

2010-02-05

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