2SJ317 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SJ317

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ317

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. Value on the alumina ceramic board (12.5×20×0.7 mm).

3. Marking is “NY”.

Ratings

–12

–7

±2

±4

2

1

150

–55 to +150

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –12

Gate to source breakdown

voltage

V(BR)GSS ±7

Gate to source cutoff current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)1

resistance

RDS(on)2

Forward transfer admittance |yfs|

Input capacitance

Ciss

—

—

–0.4

—

—

1.0

—

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on time

Turn-off time

Note: 1. Pulse test

t on

—

t off

—

Typ Max

—

—

—

—

—

±5

—

–1

—

–1.4

0.4

0.7

0.28 0.35

2.3

—

63

—

180 —

23

—

500 —

2860 —

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

Test conditions

ID = –1 mA, VGS = 0

IG = ±10 µA, VDS = 0

VGS = ±6.5 V, VDS = 0

VDS = –8 V, VGS = 0

ID = –100 µA, VDS = –5 V

ID = –0.5 A*1, VGS = –2.2 V

ID = –1 A*1, VGS = –4 V

ID = –1 A*1, VDS = –5 V

VDS = –5 V, VGS = 0,

f = 1 MHz

ID = –0.2 A*1, Vin = –4 V,

RL = 51 Ω

2

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