2SD788 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SD788

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD787, 2SD788

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

2SD787

2SD788

Unit

20

20

V

16

20

V

6

6

V

2

2

A

0.9

0.9

W

150

150

°C

–55 to +150

–50 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SD787

Item

Symbol Min Typ

Collector to base

breakdown voltage

V(BR)CBO 20

—

Collector to emitter

breakdown voltage

V(BR)CEO 16

—

Emitter to base

breakdown voltage

V(BR)EBO

6

—

Collector cutoff current ICBO

Emitter cutoff current IEBO

DC current transfer ratio hFE*1

Collector to emitter

saturation voltage

VCE(sat)

——

——

100 —

——

Gain bandwidth product fT

— 100

2SD788

Max Min Typ

— 20 —

— 20 —

—6

—

2 ——

0.2 — —

800 100 —

0.3 — —

— — 100

Collector output

capacitance

Cob

— 20 — — 20

Note: 1. The 2SD787 and 2SD788 are grouped by hFE as follows.

B

C

D

E

100 to 200 160 to 320 250 to 500 400 to 800

Max Unit Test conditions

—V

IC = 10 µA, IE = 0

—V

IC = 1 mA, RBE = ∞

—V

IE = 10 µA, IC = 0

2 µA

0.2 µA

800

0.3 V

VCB = 16 V, IE = 0

VEB = 6 V, IC = 0

VCE = 2 V, IC = 0.1 A

IC = 1 A, IB = 0.1 A

— MHz VCE = 2 V,

IC = 10 mA

— pF VCB = 10 V, IE = 0,

f = 1 MHz

2

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