D667(2010) Просмотр технического описания (PDF) - Renesas Electronics

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D667
(Rev.:2010)

Silicon NPN Epitaxial

Renesas Electronics 

2SD667, 2SD667A

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current

DC current transfer ratio

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE1*1

2SD667

Min Typ Max

120 —

—

80

—

—

5

—

—

—

—

10

60

—

320

2SD667A

Min Typ Max

120 —

—

100 —

—

5

—

—

—

—

10

60

— 200

hFE2

30

—

—

30

—

—

Collector to emitter

saturation voltage

VCE(sat)

—

—

1

—

—

1

Base to emitter voltage

VBE

—

—

1.5

—

—

1.5

Gain bandwidth product

fT

— 140 —

— 140 —

Collector output

Cob

—

12

—

—

12

—

capacitance

Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.

2. Pulse test

B

C

D

2SD667

60 to 120 100 to 200 160 to 320

2SD667A 60 to 120 100 to 200

(Ta = 25°C)

Unit Test conditions

V IC = 10 µA, IE = 0

V IC = 1 mA, RBE = ∞

V IE = 10 µA, IC = 0

µA

V

V

MHz

pF

VCB = 100 V, IE = 0

VCE = 5 V,

IC = 150 mA*2

VCE = 5 V,

IC = 500 mA*2

IC = 500 mA,

IB = 50 mA*2

VCE = 5 V,

IC = 150 mA*2

VCE = 5 V,

IC = 150 mA*2

VCB = 10 V, IE = 0,

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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