D2204 Просмотр технического описания (PDF) - Toshiba
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D2204 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2204
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SD2204
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
65 ± 10
V
Collector-emitter voltage
VCEO
65 ± 10
V
Emitter-base voltage
VEBO
7
V
DC
Collector current
IC
4
A
Pulse
ICP
6
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
25
JEDEC
JEITA
―
SC-67
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2006-11-21
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