2SC5810(2002) Просмотр технического описания (PDF) - Toshiba
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| 2SC5810 Datasheet PDF : 0 Pages | |||
1
20
0.8
0.6
0.4
IC − VCE
15
10
8
6
4
2
IB = 1 mA
0.2
Common emitter
Ta = 25 °C
0
0Single nonrepetitive pulse
0
0.2
0.4
0.6
0.8
1
1.2
Collector-emitter voltage VCE (V)
VCE (sat) − IC
1
Common emitter
IC/IB = 50
0.3 Single nonrepetitive pulse
0.1
Ta = 100°C
0.03
25 −55
0.01
0.003
0.001 0.003 0.01
0.03
0.1
0.3
1
Collector current IC (A)
2SC5810
10000
1000
hFE − IC
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Ta = 100°C
25
100
−55
30
0.001 0.003 0.01
0.03
0.1
0.3
1
Collector current IC (A)
VBE (sat) − IC
10
Common emitter
IC/IB = 50
3
Single nonrepetitive pulse
25 −55
1
Ta = 100°C
0.3
0.1
0.03
0.001 0.003 0.01
0.03
0.1
0.3
1
Collector current IC (A)
IC – VBE
1.0
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
3
2002-08-13
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