2SC2462 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2462

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC2462

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Emitter current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

Ratings

Unit

50

V

40

V

5

V

100

mA

–100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 50

—

voltage

Collector to emitter breakdown V(BR)CEO 40

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SC2462 is grouped by hFE as follows.

Grade

B

C

D

Mark

LB

LC

LD

hFE

100 to 200 160 to 320 250 to 500

Max Unit

—

V

—

V

—

V

0.5 µA

0.5 µA

500

0.2 V

0.75 V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 30 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCE = 12 V, IC = 2 mA

See characteristic curves of 2SC458 (LG).

2

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