2SB1025 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

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2SB1025

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1025

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

0

–1.2

–1.0

–0.8

–0.6

Saturation Voltage vs. Collector Current

IC = 10 IB

Pulse

VBE (sat)

Ta = –25°C

25

75

–0.4

–0.2

VCE (sat)

Ta = 75°C

25

–25

0

–1 –3 –10 –30 –100 –300 –1,000

Collector Current IC (mA)

Gain Bandwidth Product vs.

Collector Current

VCE = –5 V

300

200

100

–10

–30

–100 –300

Collector Current IC (mA)

–1,000

Collector Output Capacitance vs.

Collector to Base Voltage

200

f = 1 MHz

100 IE = 0

50

20

10

5

2

–1 –2

–5 –10 –20 –50 –100

Collector to Base Voltage VCB (V)

4

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