2N3227 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
2N3227 Datasheet PDF : 2 Pages
| |||
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCE(SAT)
VBE(SAT)
hFE
hfe
tS
Toff
ton
Cob
Cib
Collector-Emitter saturation
Voltage (1)
Base-Emitter saturation
Voltage (1)
DC Current Gain
Small Signal Current Gain
Storage time
Turn-off time
Turn-on time
Output Capacitance
Input Capacitance
IC=10 mA, IB=1.0 mA
-
IC=100 m A, IB=10 mA
-
IC=10 mA, IB=1.0 mA
-
IC=100 m A, IB=10 mA
-
VCE=1.0 V, IC=10 mA
100
VCE=1.0 V, IC=10 mA TA =-55°c 40
VCE=1.0 V, IC=100 mA
30
VCE=10 V, IC=10 mA , f=100MHz
5
IC = IB1 = IB2 =10 mA
-
IC=10 A;IB1=
mA;VCc=3.0 V
3
mA;IB2
=1.5
-
IC=10 A;IB1= 3 mA; VCc=3.0 V ;
VEB(off) = 1.5 V
-
VCB=5 V ; IE=0 , f=140kHz
-
VBE=1 V ; IC=0 , f=140kHz
-
NPN 2N3227
MECHANICAL DATA CASE TO-18
-
-
0.25
0.45
V
-
-
0.85
1.4
V
- 300
-
-
-
-
-
-
-
-
- 13
-
18 ns
- 12
- 4.0 pF
- 4.0 pF
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
COMSET SEMICONDUCTORS
2/2
Share Link: 