2N3227(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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2N3227 Datasheet PDF : 3 Pages
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NPN 2N3227
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
ICBO
ICEX
IBL
BVCBO
BVEBO
BVCEO
BVCES
VCE(SAT)
VBE(SAT)
hFE
hfe
tS
Toff
ton
Cob
Cib
IE = 0 ; VCB = 20V
-
Collector cut-off current
IE = 0 ; VCB = 20V
TA = 150°C
-
Collector cut-off curren
VCE = 20V ; VEB(off) = 3V
-
Base cut-off curren
VCE = 20V ; VEB(off) = 3V
-
Collector-Base Breakdown
voltage
IC =10 µA ; IB = 0
40
Emitter-Base Breakdown
voltage
IE =10 µA ; IC = 0
6
Collector-Emitter Breakdown
voltage
IC = 10 mA
20
Collector-Emitter voltage
IC =10 µA ; IB = 0
40
Collector-Emitter saturation
IC=10 mA, IB=1.0 mA
-
Voltage
IC=100 m A, IB=10 mA
-
Base-Emitter saturation Voltage
IC=10 mA, IB=1.0 mA
IC=100 m A, IB=10 mA
-
-
VCE=1.0 V, IC=10 mA
100
DC Current Gain
VCE=1.0 V, IC=10 mA
TA =-55°c
40
VCE=1.0 V, IC=100 mA
30
Small Signal Current Gain
VCE=10 V, IC=10 mA
f=100MHz
5
Storage time
IC = IB1 = IB2 =10 mA
-
Turn-off time
IC=10 A;IB1= 3 mA;
IB2 =1.5 mA;VCC=3.0 V
-
Turn-on time
IC=10 A;IB1= 3 mA
VCC=3.0 V, VEB(off) = 1.5 -
V
Output Capacitance
VCB=5 V ;
f=140kHz
IE=0
,
-
Input Capacitance
VBE=1 V ;
f=140kHz
IC=0
,
-
- 0.2
-
50 µA
- 0.2
- 0.5
-
-
V
-
-
V
-
-
V
-
-
V
-
-
0.25
0.45
V
-
-
0.85
1.4
V
- 300
-
-
-
-
-
-
-
-
- 13
- 18
Ns
- 12
- 4.0 pF
- 4.0 pF
16/10/2012
COMSET SEMICONDUCTORS
2/3
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