2MBI150VB-120-50 Просмотр технического описания (PDF) - Fuji Electric
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2MBI150VB-120-50 Datasheet PDF : 6 Pages
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2MBI150VB-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
350
VGE=20V 15V 12V
300
250
200
150
10V
100
50
0
0
8V
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
350
300
Tj=25°C 125°C
150°C
250
200
150
100
50
0
0
1
2
3
4
Collector-Emitter Voltage: VCE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
Cres
1
Coes
0.1
0
10
20
30
Collector-Emitter voltage: VCE [V]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
350
300
VGE= 20V 15V
12V
250
200
150
10V
100
8V
50
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
8
6
4
2
IC=300A
IC=150A
IC=75A
0
5
10
15
20
25
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
VCC=600V, IC=150A, Tj= 25°C
20
15
VCE
10
5
0
-5
VGE
-10
-15
-20
-1.5 -1.0 -0.5 0.0 0.5 1.0
Gate charge: Qg [ μC]
800
600
400
200
0
-200
-400
-600
-800
1.5
2
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