1SS198 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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1SS198

Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

Hitachi -> Renesas Electronics 

1SS198

Absolute Maximum Ratings

(Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Symbol

VR

I

O

Tj

Tstg

Value

10

30

125

–55 to +125

Unit

V

mA

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Forward current

Reverse current

Capacitance

Rectifier efficiency

Symbol Min Typ Max

IF

4.5 —

—

I

—

—

70

R

C

—

—

1.5

η

70

—

—

ESD-Capability *1

—

100 —

—

Notes:

1.

Failure

Criterion

;

I

R

≥

140µA

at

V

R

=

6V

Unit

mA

µA

pF

%

V

Test Condition

VF = 1V

V = 6V

R

V = 1V, f = 1MHz

R

Vin

=

2Vrms,

f

=

40MHz,

R

L

=

5kΩ,

CL = 20pF

C = 200pF, Both forward and

reverse direction 1 pulse.

Rev.1, Oct. 1998, page 2 of 5

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