150EBU02 Просмотр технического описания (PDF) - Vishay Semiconductors
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150EBU02 Datasheet PDF : 8 Pages
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www.vishay.com
180
160
140
DC
120
100 Square wave (D = 0.50)
80% Rated Vr applied
80
see note (1)
60
0 50 100 150 200 250
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
250
200
RMS Limit
150
100
50
0
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
50 100 150 200 250
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
VS-150EBU02
Vishay Semiconductors
70
IF = 150A
IF = 75A
60
50
40
30
20 Vr = 160V
Tj = 125˚C
Tj = 25˚C
10
100
1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
900
800 Vr = 160V
Tj = 125˚C
700
Tj = 25˚C
600
IF = 150A
IF = 75A
500
400
300
200
100
0
100
1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Revision: 15-Jun-11
4
Document Number: 93002
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