5SLX12K1711 Просмотр технического описания (PDF) - ABB
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5SLX12K1711 Datasheet PDF : 3 Pages
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5SLX 12K1711
300
100
200
Vcc = 900 V
di/dt = 800 A/µs
250
Tvj = 125 °C
Irr
25°C
Lσ = 800 nH
75
150
125°C
200
150
50
100
Qrr
100
25
50
Erec
50
0
0
0.5
1
1.5
2
2.5
VF [V]
Fig. 1 Typical diode forward characteristics
0
0
0 50 100 150 200 250 300
IF [A]
Fig. 2 Typical reverse recovery characteristics
vs. forward current
200
200
VCC = 900 V
IF = 150 A
150
di/dt = 800 A/µs 0
Tvj = 125 °C
Lσ = 800 nH
100
-200
50
-400
IR
0
-600
-50
-100
VR -800
-1000
-150
0
-1200
400 800 1200 1600 2000 2400
time [ns]
Fig. 3 Typical diode reverse recovery behaviour
100
Vcc = 900 V
IF = 150 A
Tvj = 125 °C
Lσ = 800 nH
75
200
Irr
150
50
Erec
25
100
Qrr
50
0
0
0 200 400 600 800 1000 1200
di/dt [A/µs]
Fig. 4 Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1662-01 Feb. 05
page 2 of 3
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