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W29EE011T90B

128K × 8 CMOS FLASH MEMORY

Winbond 

W29EE011

1. GENERAL DESCRIPTION

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The

device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W29EE011 results in fast program/erase operations

with extremely low current consumption (compared to other comparable 5-volt flash memory products).

The device can also be programmed and erased using standard EPROM programmers.

2. FEATURES

y Single 5-volt program and erase operations

y Fast page-write operations

− 128 bytes per page

− Page program cycle: 10 mS (max.)

− Effective byte-program cycle time: 39 µS

− Optional software-protected data write

y Fast chip-erase operation: 50 mS

y Read access time: 90/150 nS

y Page program/erase cycles: 1K/10K

y Ten-year data retention

y Software and hardware data protection

y Low power consumption

− Active current: 25 mA (typ.)

− Standby current: 20 µA (typ.)

y Automatic program timing with internal VPP generation

y End of program detection

− Toggle bit

− Data polling

y Latched address and data

y TTL compatible I/O

y JEDEC standard byte-wide pinouts

y Available packages: 32-pin 600 mil DIP, 32-pin TSOP (8 x 20 mm), 32-pin STSOP

(8 x 14 mm), 32-pin PLCC, and Lead-free 32-pin PLCC

Publication Release Date: April 11, 2006

-3-

Revision A18

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