UFB120FA20P(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
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UFB120FA20P Datasheet PDF : 7 Pages
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UFB120FA20P
Vishay High Power Products Insulated Ultrafast
Rectifier Module, 120 A
150
140
130
120
DC
110
100 Square wave (D = 0.50)
80% Rated Vr applied
90 see note (1)
80
0 10 20 30 40 50 60 70
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Diode)
80
If = 50A
70
Vrr = 200V
60
Tj = 125˚C
50
40
Tj = 25˚C
30
20
10
0
100
1000
dIF /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
60
RMS Limit
50
40
DC
30
D = 0.01
D = 0.02
20
D = 0.05
D = 0.10
D = 0.20
10
D = 0.50
0
0 10 20 30 40 50 60 70
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss (Per Diode)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
800
If = 50A
700 Vrr = 200V
600
500
Tj = 125˚C
400
300
200
100
Tj = 25˚C
0
100
1000
dIF /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94522
Revision: 07-May-08
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