TK7P60W Просмотр технического описания (PDF) - Toshiba
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TK7P60W Datasheet PDF : 10 Pages
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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
600
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.35 mA
2.7
Drain-source on-resistance
RDS(ON) VGS = 10 V, ID = 3.5 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Test Condition
Min
Ciss
VDS = 300 V, VGS = 0 V, f = 1 MHz
Crss
Coss
Co(er) VDS = 0 to 400 V, VGS = 0 V
rg
VDS = OPEN, f = 1 MHz
tr
See Figure 6.2.1
ton
tf
toff
dv/dt VDD = 0 to 400 V, ID = 3.5 A
25
TK7P60W
Typ. Max Unit
±1
µA
10
V
3.7
0.5
0.6
Ω
Typ. Max Unit
490
pF
1.7
13
21
7.0
Ω
18
ns
40
7.0
55
V/ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 7.0 A
15
nC
Qgs1
Qgd
3.2
8.0
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
Test Condition
Min Typ. Max Unit
VDSF IDR = 7.0 A, VGS = 0 V
-1.7
V
trr
IDR = 3.5 A, VGS = 0 V
Qrr
-dIDR/dt = 100 A/µs
230
ns
1.7
µC
Irr
16
A
dv/dt IDR = 3.5 A, VGS = 0 V, VDD = 400 V
15
V/ns
3
2012-09-10
Rev.1.0
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