K12A45D Просмотр технического описания (PDF) - Toshiba
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K12A45D Datasheet PDF : 6 Pages
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RDS (ON) − Tc
2
Common source
VGS = 10 V
Pulse Test
1.6
1.2
12
6
0.8
ID = 3 A
0.4
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
TK12A45D
100
Common source
Tc = 25°C
Pulse Test
IDR − VDS
10
1
10
5
3
1 VGS = 0 V
0.1
0
−0.3
−0.6
−0.9
−1.2
−1.5
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – VDS
Ciss
Coss
10
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
Vth − Tc
5
4
3
2
Common source
1 VDS = 10 V
ID = 1mA
Pulse Test
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD − Tc
80
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
400
VDS
300
200
100
16
180
VDD = 90 V
VGS
12
360
8
Common source
ID = 12 A
Tc = 25°C
Pulse Test
4
0
0
0
8
16
24
32
40
Total gate charge Qg (nC)
4
2013-11-01
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