K12X60U Просмотр технического описания (PDF) - Toshiba
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K12X60U Datasheet PDF : 3 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK12X60U
TK12X60U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.36Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
600
V
±30
V
12
A
24
100
W
69
mJ
12
A
10
mJ
150
°C
-55~150
°C
Unit: mm
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-9F1C
Weight : 0.74 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
4
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.84 mH, RG = 25Ω, IAR = 12 A
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2008-07-01
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