T4016DKS Просмотр технического описания (PDF) - STMicroelectronics

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T4016DKS

SNUBBERLESS TRIACS

STMicroelectronics 

Fig.1 : Maximum power dissipation versus RMS

on-state current.

T4016xKS

Fig.2 : Correlation between maximum power dissi-

pation and maximum allowable temperature

(Tamb and Tcase) for different thermal resistances

heatsink + contact.

P(W)

60

50

40

30

180 O

= 180o

= 120o

= 90o

= 60o

20

= 30 o

10

I T(RMS) (A)

0

0 5 10 15 20 25 30 35 40

Fig.3 : RMS on-state current versus case tempera-

ture.

I T(RMS)(A)

50

40

30

= 180o

20

10

Tcas e(oC)

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

P (W)

60

50

40

30

20

Tcase (oC)

Rth = 0 oC/W

0.5 oC/W -75

1 o C/W

1.5 oC/W

-85

-95

-105

10

Tamb (oC)

-115

0

-125

0 10 20 30 40 50 60 70 80 90 100 110 120 130

Fig.4 : Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1

0.1

0.01

1E-3

1E-2

1E-1

1E +0

tp (s)

1E+1

Fig.5 : Relative variation of gate trigger current

and holding current versus junction temperature.

Igt[Tj]

Igt[Tj=25 o C]

2.6

Ih[Tj]

Ih[Tj=25 o C]

2.4

2.2

2.0

1.8

Igt

1.6

1.4

1.2 Ih

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

ITSM(A)

30 0

25 0

20 0

15 0

10 0

50

Number of cycles

0

1

10

Tj initial = 25oC

10 0

10 00

3/5

®

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