T15V2M16B-55SI Просмотр технического описания (PDF) - Taiwan Memory Technology

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T15V2M16B-55SI

128K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

SRAM

T15V2M16B

128K X 16 LOW POWER

CMOS STATIC RAM

FEATURES

• Access time : 45/55/70/100 ns

• Low-power consumption

- Active: 5mA (ICC1)

- Stand-by: (CMOS input/output)

Max.. 15 uA for 55/70/100ns

Max.. 40 uA for 45ns

• Equal access and cycle time

• Single +2.7V to 3.6V Power Supply

• TTL compatible , Tri-state output

• Common I/O capability

• Automatic power-down when deselected

• Available in 44-PIN TSOP-II and 48-pin CSP

packages

• Operating temperature :

- -10 ~ +70 °C

- -40 ~ +85 °C

GENERAL DESCRIPTION

The T15V2M16B is a very Low Power CMOS

Static RAM organized as 131,072 words by 16

bits . This device is fabricated by high

performance CMOS technology. It can be operated

under wide power supply voltage range from

+2.7V to +3.6V.

The T15V2M16B inputs and three-state

outputs are TTL compatible and allow for direct

interfacing with common system bus structures.

Data retention is guaranteed at a power supply

voltage as low as 2V.

BLOCK DIAGRAM

PART NUMBER EXAMPLES

PART NUMBER

T15V2M16B-55S

T15V2M16B-70C

T15V2M16B-55SI

T15V2M16B-70CI

PACKAGE

TSOP-II

CSP

TSOP-II

CSP

Temperature

-10 ~ +70 °C

-10 ~ +70 °C

-40 ~ +85 °C

-40 ~ +85 °C

Vcc

Vss

A0 DECODER

.

.

.

A16

CE

WE

OE

LB

CONTROL

CIRCUIT

UB

CORE

ARRAY

I/O1

DATA I/O

.

.

.

I/O16

TM Technology Inc. reserves the right

P. 1

to change products or specifications without notice.

Publication Date: NOV. 2002

Revision:A

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