P75NS04Z Просмотр технического описания (PDF) - STMicroelectronics

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P75NS04Z

N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay™ III Power MOSFET

STMicroelectronics 

STP75NS04Z

Electrical characteristics

Table 6. Switching on/off

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

Test condictions

VDD= 20V, ID = 40A

RG= 4.7 Ω, VGS= 10V,

(see Figure 12)

VDD= 20V, ID = 40A

RG= 4.7 Ω, VGS= 10V,

(see Figure 12)

Min. Typ. Max. Unit

16

ns

248

ns

53

ns

85

ns

Table 7. Source drain diode

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on Voltage

ISD=80A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80A, di/dt = 100A/µs,

VDD=30V, Tj=150°C

(see Figure 17)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

80 A

320 A

1.5 V

53

ns

91

nC

3.4

A

5/12

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