SS8050LT1 Просмотр технического описания (PDF) - Weitron Technology

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SS8050LT1

NPN General Purpose Transistors

Weitron Technology 

SS8050LT1

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(IC=100 mAdc, VCE=1.0 Vdc)

(IC=800 mAdc, VCE=1.0 Vdc)

Collector-Emitter Saturation Voltage

(IC=800 mAdc, IB=80mAdc)

Base-Emitter Saturation Voltage

(IC=800 mAdc, IB=80mAdc)

hFE (1)

120

hFE (2)

40

VCE(sat)

-

VBE(sat)

-

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product

(IC=50 mAdc, VCE=10 Vdc, f=30MHz)

fT

100

Max

Unit

350

-

-

-

0.5

Vdc

1.2

Vdc

-

MHz

CLASSIFICATION OF hFE(1)

Rank

L

Range

120-200

H

200-350

WEITRON

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