R6015ANJTL Просмотр технического описания (PDF) - ROHM Semiconductor
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R6015ANJTL Datasheet PDF : 6 Pages
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R6015ANJ
Data Sheet
100
VGS= 0V
Pulsed
10 Ta= 125°C
Ta= 75°C
Ta= 25°C
1 Ta= -25°C
10000
1000
100
Coss
Crss
Cis s
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10
Ta= 25°C
f= 1MHz
1 VGS= 0V
0.01 0.1
1
10
100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
15
Ta= 25°C
VDD= 300V
ID= 15A
RG= 10Ω
10 Pulsed
5
0
0 10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
1000
100
10000
tf
1000
td(off)
100
Ta= 25°C
VDD= 300V
VGS= 10V
RG= 10Ω
Pulsed
10
0.1
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
10
tr
td(on)
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
10
Ta = 25°C
Single Pulse : 1Unit
1 Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 49.7 °C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
1000
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4/5
2009.04 - Rev.A
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