R6015ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 600
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
100 µA VDS=600V, VGS=0V
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
VGS(th)
2.5
RDS(on) ∗
−
| Yfs | ∗ 4.5
−
4.5
0.23 0.3
−
−
V VDS=10V, ID=1mA
Ω ID=7.5A, VGS=10V
S ID=7.5A, VDS=10V
Input capacitance
Ciss
− 1700 −
pF VDS=25V
Output capacitance
Coss
− 1120 −
pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
−
td(on) ∗
−
tr ∗ −
td(off) ∗
−
tf ∗ −
Qg ∗ −
Qgs ∗
−
Qgd ∗
−
80
−
50
−
50
−
150 −
60
−
50
−
8
−
20
−
pF f=1MHz
ns ID=7.5A, VDD 300V
ns VGS=10V
ns RL=40Ω
ns RG=10Ω
nC VDD 300V
ID=15A
nC VGS=10V
nC RL=20Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.5 V IS=15A, VGS=0V
Data Sheet
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2009.04 - Rev.A