NE4210S01 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

Список матч

NE4210S01

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut off Voltage

Transconductance

Noise Figure

Associated Gain

Symbol

IGSO

IDSS

VGS (off)

gm

NF

Ga

Test Conditions

VGS = –3 V

VDS = 2 V, VGS = 0 V

VDS = 2 V, IDS = 100 µA

VDS = 2 V, IDS = 10 mA

VDS = 2 V, IDS = 10 mA

f = 12 GHz

NE4210S01

MIN.

TYP.

MAX.

Unit

–

0.5

10

µA

15

40

70

mA

–0.2

–0.7

–2.0

V

40

55

–

mS

–

0.50

0.70

dB

11.0

13.0

–

dB

2

Data Sheet P14232EJ2V0DS00

Share Link: